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Description
Error reported by user:
While using the NIST Neutron activation calculator ( https://www.ncnr.nist.gov/resources/activation/ ) to model the residual activity of a hypothetical silicon sample irradiated by thermal neutrons, I noted that the calculator states the half-life of the Si[32] isotope as one-hundred (100) years (highlighted in the activation table below.) This 100y half-life for Si[32] Beta- emission is likely incorrectly low. Recent literature half-lives for the decay of Si[32] to P[32] by Beta- emission are 172+/-4 years or 163+/-6 years. Please see the references below the table and in the attached paper. Using a 100-year half-life could tend to predict a higher activity and a shorter safe quenching time than would physically be the case for a given amount of transmuted Si[32] material.
Example NCNR Activation Calculation
Activation of Si after 10 hrs at 2.00e+14 n/cm2/s
Estimated activation only. All samples must be evaluated by NIST Health Physics to determine if and how the sample can be removed from the NCNR.
Sample in beam: 840.000 g of Si
Rabbit system: Cd ratio = 0, thermal/fast ratio = 100
Time to decay below 5.0000e-4 μCi is 60.5 yrs.
Activity (μCi)>5.0000e-4 μCi
| element | reaction | product | half life | 0 hrs | 1 hr | 24 hrs | 15 days | 1 yrs |
|---|---|---|---|---|---|---|---|---|
| Si-28 | n,p | Al-28 | 2.25 m | 5.7644e+6 | 5.4111e-2 | 1.2634e-186 | 0.0000e+0 | 0.0000e+0 |
| Si-29 | n,p | Al-29 | 6.5 m | 1.4531e+5 | 2.4185e+2 | 2.9687e-62 | 0.0000e+0 | 0.0000e+0 |
| Si-30 | act | Si-31 | 2.62 h | 2.8088e+8 | 2.1558e+8 | 4.9089e+5 | 1.2179e-33 | 0.0000e+0 |
| Si-30 | 2n | Si-32 | 100 y | 7.6036e-4 | 7.6036e-4 | 7.6034e-4 | 7.6014e-4 | 7.5510e-4 |
| Si-30 | n,a | Mg-27 | 9.458 m | 4.3795e+3 | 5.3919e+1 | 6.4416e-43 | 0.0000e+0 | 0.0000e+0 |
| total activity | 2.8679e+8 | 2.1558e+8 | 4.9089e+5 | 7.6014e-4 | 7.5510e-4 |
References:
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Alburger et al. at Brookhaven (1986) provided a fitted figure of 172(4) years for the Si[32] half-life, abstract below; paper attached. Table 2 lists experimental half-life values.
D.E. Alburger, G. Harbottle, E.F. Norton, “Half-life of 32Si” Earth and Planetary Science Letters, Volume 78, Issues 2–3,1986, Pages 168-176, ISSN 0012-821X doi:10.1016/0012-821X(86)90058-0
Abstract: Beta rays from a 32Si-32P source, produced in 1968–1969 via the 30Si(t,p)32Si reaction using a Van de Graaff beam at Et = 3.4 MeV, were counted with an end-window gas-flow proportional counter system including an automatic precision sample changer. Comparison counts were taken on the β rays from a 36Cl source. Measurements beginning February, 1982 were made at approximately 4-week intervals, each consisting of a total of 40 hours of counting on each sample. The decay rate was determined from the32Si/36Cl ratio of counts. Small periodic annual deviations of the data points from an exponential decay curve were observed, but are of uncertain origin and had no significant effect on the result. Based on the analysis of 53 points taken in 48 months, the value T1/2 = 172(4) yr is adopted for the half-life of 32Si. This result is substantially greater than two previously reported measurements of 108(18) yr and 101(18) yr but is lower than values based on geophysical evidence. -
[South] Korea Atomic Energy Research Institute, citing NUDAT information from 1999: https://atom.kaeri.re.kr/cgi-bin/nuclide?nuc=Si32 (Si[32] T½ = 172 years)
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NNDC Brookhaven, Si[32] T½ = 163+/-6 years (NUDAT 3.0 published 2023) standard_booklet.pdf
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NIH PubChem: Silicon, isotope of mass 32 | Si | CID 6335897 - PubChem [updated 2025-09-20, Si[32] T½ = 172 years]]